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Analysis of Characteristics of PHEMTs Fabricated by Gate Recess Methods
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박형무 | - |
| dc.date.accessioned | 2024-10-30T01:56:53Z | - |
| dc.date.available | 2024-10-30T01:56:53Z | - |
| dc.date.issued | 2002-07-01 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/35518 | - |
| dc.title | Analysis of Characteristics of PHEMTs Fabricated by Gate Recess Methods | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2002 Asia Pacific workshop on Fundamentals and Applications of Advanced semicond | - |
| dc.citation.conferencePlace | 일본 | - |
| dc.citation.conferencePlace | Hokkaido University | - |
| dc.citation.conferenceDate | 2002-07-01 ~ 2002-07-03 | - |
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