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Electrical properties of Ge quantum dots layers by Deep Level Transient Spectroscopy
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 조훈영 | - |
| dc.date.accessioned | 2024-10-30T01:53:42Z | - |
| dc.date.available | 2024-10-30T01:53:42Z | - |
| dc.date.issued | 2002-10-24 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/35048 | - |
| dc.title | Electrical properties of Ge quantum dots layers by Deep Level Transient Spectroscopy | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | International Symposium on Nano Science & Technology | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 한양대학교 | - |
| dc.citation.conferenceDate | 2002-10-24 ~ 2002-10-25 | - |
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