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50 nm InGaAs/InAlAs/GaAs Metamorphic HEMTs using double exposure without the dielectric support
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이진구 | - |
| dc.date.accessioned | 2024-10-30T01:47:18Z | - |
| dc.date.available | 2024-10-30T01:47:18Z | - |
| dc.date.issued | 2004-02-19 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/34302 | - |
| dc.title | 50 nm InGaAs/InAlAs/GaAs Metamorphic HEMTs using double exposure without the dielectric support | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 제11회 반도체 학술대회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 무주 | - |
| dc.citation.conferenceDate | 2004-02-19 ~ 2004-02-20 | - |
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