Small Signal Parameter analysis of 0.1 um Off-Set Gamma-Shaped Gate InGaAs/InAlAs/GaAs Metamorphic High Electron Mobility Transistors

김삼동

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Small Signal Parameter analysis of 0.1 um Off-Set Gamma-Shaped Gate InGaAs/InAlAs/GaAs Metamorphic High Electron Mobility Transistors

Authors: 김삼동

Issue Date: 26-Feb-2004

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/34249

Place: 일본
Yokosuka Research Park(Japan)

Conference Date: 2004-02-26 ~ 2004-02-27

Conference Name: International Joint conference of the 6th TSMMW & MINT-MIS 2004

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Appears in Collections: College of Engineering > Department of Electronics and Electrical Engineering > 2. Conference Papers

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