Sub-0.1 um Gamma-Gate In0.53Ga0.47As/In0.52Al0.48As/GaAs Metamorphic HEMT 개발을 위한 최적 에피 구조에 대한 연구

김삼동

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Sub-0.1 um Gamma-Gate In0.53Ga0.47As/In0.52Al0.48As/GaAs Metamorphic HEMT 개발을 위한 최적 에피 구조에 대한 연구

Authors: 김삼동

Issue Date: 19-Feb-2004

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/34248

Place: 대한민국
무주 리조트

Conference Date: 2004-02-19 ~ 2004-02-20

Conference Name: 제 11회 반도체 학술대회

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Appears in Collections: College of Engineering > Department of Electronics and Electrical Engineering > 2. Conference Papers

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