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Deep submicron MOSFET model considering carrier velocity saturation
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 임현식 | - |
| dc.date.accessioned | 2024-10-30T01:47:04Z | - |
| dc.date.available | 2024-10-30T01:47:04Z | - |
| dc.date.issued | 2003-04-25 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/34220 | - |
| dc.title | Deep submicron MOSFET model considering carrier velocity saturation | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국 물리 학회 봄 정기 총회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 서울 | - |
| dc.citation.conferenceDate | 2003-04-25 ~ 2003-04-26 | - |
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