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Electrical properties in metal-oxide-GaN nanorods grown by grown on Si(100) by rf-plasma assisted molecular beam epitaxy
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김득영 | - |
| dc.date.accessioned | 2024-10-30T01:46:43Z | - |
| dc.date.available | 2024-10-30T01:46:43Z | - |
| dc.date.issued | 2003-10-24 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/34091 | - |
| dc.title | Electrical properties in metal-oxide-GaN nanorods grown by grown on Si(100) by rf-plasma assisted molecular beam epitaxy | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국물리학회 2003 가을 학술논문발표회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 경북대학교, 대구 | - |
| dc.citation.conferenceDate | 2003-10-24 ~ 2003-10-25 | - |
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