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Relation between deep levels and memory effects in Si/oxide-nitride-oxide/p-Si(100) structures
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 조훈영 | - |
| dc.date.accessioned | 2024-10-30T01:46:40Z | - |
| dc.date.available | 2024-10-30T01:46:40Z | - |
| dc.date.issued | 2003-12-10 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/34071 | - |
| dc.title | Relation between deep levels and memory effects in Si/oxide-nitride-oxide/p-Si(100) structures | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | International Conference on Advanced Materials and Devices | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | Ramada Plaza, 제주 | - |
| dc.citation.conferenceDate | 2003-12-10 ~ 2003-12-12 | - |
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Collections - College of Natural Science > Department of Physics > 2. Conference Papers
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