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Optical properties of straight and well-aligned p-type GaN nanorods on (0001) sapphire substrate by hydride vapor phase epitaxy
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 강태원 | - |
| dc.date.accessioned | 2024-10-30T01:44:02Z | - |
| dc.date.available | 2024-10-30T01:44:02Z | - |
| dc.date.issued | 2003-05-25 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/33559 | - |
| dc.title | Optical properties of straight and well-aligned p-type GaN nanorods on (0001) sapphire substrate by hydride vapor phase epitaxy | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | The Fifth International Conference on Nitride Semiconductors | - |
| dc.citation.conferencePlace | 일본 | - |
| dc.citation.conferencePlace | Nara-Ken New Public Hall | - |
| dc.citation.conferenceDate | 2003-05-25 ~ 2003-05-30 | - |
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