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GaAs 기반 0.1 um Gamma-gate MHEMT의 DC/RF 특성에 대한 scaling
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김삼동 | - |
| dc.date.accessioned | 2024-10-30T01:43:52Z | - |
| dc.date.available | 2024-10-30T01:43:52Z | - |
| dc.date.issued | 2003-11-29 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/33496 | - |
| dc.title | GaAs 기반 0.1 um Gamma-gate MHEMT의 DC/RF 특성에 대한 scaling | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 대한전자공학회 추계종합학술대회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 천안 상록 리조트 | - |
| dc.citation.conferenceDate | 2003-11-29 | - |
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