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Preparation of CdS Thin Films by MOCVD using a New Single-Source Precursor C10H22CdN22CdN2 and C14H30CdN2S4
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 유국현 | - |
| dc.date.accessioned | 2024-10-30T01:41:23Z | - |
| dc.date.available | 2024-10-30T01:41:23Z | - |
| dc.date.issued | 2004-10-21 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/33051 | - |
| dc.title | Preparation of CdS Thin Films by MOCVD using a New Single-Source Precursor C10H22CdN22CdN2 and C14H30CdN2S4 | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 대한화학회 제94회 학술발표회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 제주 국제컨벤션센터 | - |
| dc.citation.conferenceDate | 2004-10-21 ~ 2004-10-22 | - |
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