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GaN Nanorod Growth on Si(111) Substrate by Molecular Beam Epitaxy
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 강태원 | - |
| dc.date.accessioned | 2024-10-30T01:37:24Z | - |
| dc.date.available | 2024-10-30T01:37:24Z | - |
| dc.date.issued | 2004-03-14 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/32524 | - |
| dc.title | GaN Nanorod Growth on Si(111) Substrate by Molecular Beam Epitaxy | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | International Symposium on the Physics of Semiconductors and Applications-2004 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | Hotel Hyundai, Gyeongju | - |
| dc.citation.conferenceDate | 2004-03-14 ~ 2004-03-16 | - |
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