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Pressure dependence of Raman shift of cubic and hexagonal CdS single-crystal thin films grown on GaAs substrate by low pressure MOCVD with a single precurser:dipropyl-carbamate C14H30CdN2S4
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 유국현 | - |
| dc.date.accessioned | 2024-10-30T01:36:55Z | - |
| dc.date.available | 2024-10-30T01:36:55Z | - |
| dc.date.issued | 2004-10-22 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/32353 | - |
| dc.title | Pressure dependence of Raman shift of cubic and hexagonal CdS single-crystal thin films grown on GaAs substrate by low pressure MOCVD with a single precurser:dipropyl-carbamate C14H30CdN2S4 | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국물리학회 임시총회 및 학술대회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 제주대학교 | - |
| dc.citation.conferenceDate | 2004-10-22 ~ 2004-10-23 | - |
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