Effects of the Silicon Nitride Passivation on the DC and RFPerformance of 0.1 um Pseudomorphic HEMTs

김삼동

Detailed Information

Cited 0 time in webofscience

Cited 0 time in scopus

Metadata Downloads

Effects of the Silicon Nitride Passivation on the DC and RFPerformance of 0.1 um Pseudomorphic HEMTs

Authors: 김삼동

Issue Date: 9-May-2004

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/31814

Place: 미국
San Antonio, U.S.A

Conference Date: 2004-05-09 ~ 2004-05-13

Conference Name: 205th Meeting of The Electrochemical Society

Files in This Item: There are no files associated with this item.

Appears in Collections: College of Engineering > Department of Electronics and Electrical Engineering > 2. Conference Papers

Show full item record

qrcode

Altmetrics

Total Views & Downloads

RSS_1.0 RSS_2.0 ATOM_1.0

30, Pildong-ro 1-gil, Jung-gu, Seoul, 04620, Republic of Korea+82-2-2260-3114

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

Detailed Information

Altmetrics

Total Views & Downloads

BROWSE