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Effects of Si spacer thickness on electroluminescences in Ge
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 양우철 | - |
| dc.date.accessioned | 2024-10-30T01:32:03Z | - |
| dc.date.available | 2024-10-30T01:32:03Z | - |
| dc.date.issued | 2005-12-11 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/31307 | - |
| dc.title | Effects of Si spacer thickness on electroluminescences in Ge | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | SPIE international symposium;Microelectronics, mems, and nanotechnology | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 호주, queensland university of technolog | - |
| dc.citation.conferenceDate | 2005-12-11 ~ 2005-12-15 | - |
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Related Researcher
- Yang, Woo Chul
- College of Natural Science (Department of Physics)