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temperature dependent switching current of Cr-doped SrZrO3/SrRuO3 deposited by PLD for ReRAM applications

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dc.contributor.author임현식-
dc.date.accessioned2024-10-30T01:25:33Z-
dc.date.available2024-10-30T01:25:33Z-
dc.date.issued2005-12-05-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/29637-
dc.titletemperature dependent switching current of Cr-doped SrZrO3/SrRuO3 deposited by PLD for ReRAM applications-
dc.typeConference-
dc.citation.conferenceName4th Int. conf. on advanced materials and devices (ICAMD)-
dc.citation.conferencePlace대한민국-
dc.citation.conferencePlace제주도-
dc.citation.conferenceDate2005-12-05 ~ 2005-12-07-
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