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Studies onchannel and gate recess modification of Metamorphic HEMT for the improved breakdown characteristics and RF performance

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dc.contributor.author이진구-
dc.date.accessioned2024-10-30T01:05:04Z-
dc.date.available2024-10-30T01:05:04Z-
dc.date.issued2007-06-25-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/27624-
dc.titleStudies onchannel and gate recess modification of Metamorphic HEMT for the improved breakdown characteristics and RF performance-
dc.typeConference-
dc.citation.conferenceName2007 Asia-Pacific Workshopn on Fundamentals and Applications of Advanced Semicon-
dc.citation.conferencePlace대한민국-
dc.citation.conferencePlace경주 조선호텔-
dc.citation.conferenceDate2007-06-25 ~ 2007-06-27-
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