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Near infrared light emitting from inn/ingan/gan dot-in-a-nanorod heterostructure

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dc.contributor.authorLee, S.-T.-
dc.contributor.authorChoi, H.-S.-
dc.contributor.authorPark, B.-G.-
dc.contributor.authorKim, K.-J.-
dc.contributor.authorKim, M.-D.-
dc.contributor.authorKim, S.-G.-
dc.contributor.authorYang, W.-C.-
dc.date.accessioned2024-09-26T21:33:07Z-
dc.date.available2024-09-26T21:33:07Z-
dc.date.issued2013-06-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/26367-
dc.description.abstractWe report on the light emitting of InN/InGaN/GaN dot-in-a-nanorods heterostructure grown on Si(111) substrates using plasma-assisted molecular beam epitaxy. Sharp and isolated single exciton emission line in the near infrared spectral range was observed. © OSA 2013.-
dc.language영어-
dc.language.isoENG-
dc.titleNear infrared light emitting from inn/ingan/gan dot-in-a-nanorod heterostructure-
dc.typeArticle-
dc.identifier.scopusid2-s2.0-84887446782-
dc.identifier.bibliographicCitationCLEO: Science and Innovations, CLEO_SI 2013, pp JTh2A.102-
dc.citation.titleCLEO: Science and Innovations, CLEO_SI 2013-
dc.citation.startPageJTh2A.102-
dc.type.docTypeConference Paper-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscopus-
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