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Corrections Statement to: The Role of the Bottom Oxide Layer in Oxide-Metal-Oxide (OMO) Electrode for Stretchable Organic Light-Emitting Diodes
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Chang Min | - |
| dc.contributor.author | Kim, Yeong Beom | - |
| dc.contributor.author | Sarker, Subrata | - |
| dc.contributor.author | Kim, Dong Hyun | - |
| dc.contributor.author | Kim, Tae Wook | - |
| dc.contributor.author | Shah, Syed Hamad Ullah | - |
| dc.contributor.author | Cho, Hyun Woo | - |
| dc.contributor.author | Bae, Tae-Sung | - |
| dc.contributor.author | Yu, Seung Min | - |
| dc.contributor.author | Kang, Yong-Cheol | - |
| dc.contributor.author | Han, Sangmin | - |
| dc.contributor.author | Justin Jesuraj, Periyanayagam | - |
| dc.contributor.author | Ko, Keum-Jin | - |
| dc.contributor.author | Song, Myungkwan | - |
| dc.contributor.author | Kim, Chang-Su | - |
| dc.contributor.author | Ryu, Seung Yoon | - |
| dc.date.accessioned | 2024-09-26T19:30:59Z | - |
| dc.date.available | 2024-09-26T19:30:59Z | - |
| dc.date.issued | 2024-06 | - |
| dc.identifier.issn | 2196-7350 | - |
| dc.identifier.issn | 2196-7350 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/26113 | - |
| dc.description.abstract | This article corrects the following: https://doi.org/10.1002/admi.202300652 1. An error in the Figure 3 (Published version) at Page number 5 of 10, Error: The chemical shifts (δ = 0.21 eV for MoO3 and δ = 0.14 eV for V2O5) mentioned in Figure 4 3(f) are wrongly. The correct chemical shifts are δ = 0.14 eV for MoO3 and δ = 0.21 eV for V2O5. 2. An error in the 1 sentence at Page number 5 of 10, a sentence is written as “As a result of this bonding between seed layer and Au, the photoelectronic spectrum corresponding to V 2p and Mo 3d encountered a positive chemical shift of 600 and 100 meV respectively as depicted in Figures 3f–h and S3 (Supporting Information).” Error: The shift mentioned here is a negative one, not positive. 3. A publishing error which we corrected in proof 1 correction is still appear in the article at the figure caption of Figure 3 Figure caption 3 i) dSchematic view of electron transfer and bonding mechanism of seed layers. Error: The “d” before the word Schematic is an error. The corrected version should be “Figure caption 3 i) Schematic view of electron transfer and bonding mechanism of seed layers”. 4. An error in the sentence at page number 8 of 10, mentioned as “Thus, the resistance of the M5M electrode significantly decreases even after a 20% strain is applied.” Error: The resistance is actually increasing as per the Figure and earlier discussions. The updated sentence can be written as “Thus, the resistance of the M5M electrode significantly increases even after a 20% strain is applied.” 5. We couldn't include a research project because the number of one funder wasn't available when we published the paper. Now, we'd like to add that information at the end of current acknowledgements. “This work was supported by the Dongguk University Research Fund of 2023. (S-2023-G0001-00092)” 6. Supporting Figure S3 (Published version) Error: The number of electrons represented in “L” shell in all images are wrong. Supporting Figure S3 (Updated version) 7. Supporting Figure S4 (Published version) Error: The number of electrons represented in “L” shell in all images are wrong. Supporting Figure S4 (Updated version). © 2024 The Authors. Advanced Materials Interfaces published by Wiley-VCH GmbH. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | John Wiley and Sons Ltd | - |
| dc.title | Corrections Statement to: The Role of the Bottom Oxide Layer in Oxide-Metal-Oxide (OMO) Electrode for Stretchable Organic Light-Emitting Diodes | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1002/admi.202400078 | - |
| dc.identifier.scopusid | 2-s2.0-85190820985 | - |
| dc.identifier.wosid | 001206829400001 | - |
| dc.identifier.bibliographicCitation | Advanced Materials Interfaces, v.11, no.16, pp 1 - 3 | - |
| dc.citation.title | Advanced Materials Interfaces | - |
| dc.citation.volume | 11 | - |
| dc.citation.number | 16 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 3 | - |
| dc.type.docType | Correction | - |
| dc.description.isOpenAccess | Y | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
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