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High-mobility electrolyte-gated perovskite transistors on flexible plastic substrate via interface and composition engineering

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dc.contributor.authorNketia-Yawson, Vivian-
dc.contributor.authorNketia-Yawson, Benjamin-
dc.contributor.authorJo, Jea Woong-
dc.date.accessioned2024-09-26T17:03:07Z-
dc.date.available2024-09-26T17:03:07Z-
dc.date.issued2023-06-
dc.identifier.issn0169-4332-
dc.identifier.issn1873-5584-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/25902-
dc.description.abstractPerovskite has emerged as a promising semiconductor for flexible electronics. However, perovskite-based flexible field-effect transistors (FETs) have typically exhibited a low performance owing to their use of conventional polymer dielectrics. To address this, interfacial and compositional engineering has been employed in emerging perovskite transistors to boost their charge-carrier transport. Here, we introduce the interfacial engineering of a perovskite surface using solution-processed poly(3-hexylthiophene) (P3HT) to enable the use of an electrolyte dielectric. Among the fabricated lead iodide-based perovskite devices (methylammonium (MA) lead triiodide (MAPbI3), formamidinium (FA) lead triiodide (FAPbI3), and mixed A-cation lead triiodide (FA0.2MA0.8PbI3)), the P3HT-capped FAPbI3 FETs exhibited the best hole mobility of 24.55 cm2 V-1 s-1 (average approximate to 16.83 +/- 4.86 cm2 V-1 s-1) on a plastic substrate at sub-2 V. This notable performance was attributed to an increase in the charge carrier density in the perovskite-P3HT hybrid channel owing to the high capacitance of the electrolyte dielectric and better injection properties of the FAPbI3 perovskite. These findings demonstrate the potential of the pro-posed approach for achieving high mobility and low-voltage operated flexible perovskite-based transistor devices.-
dc.format.extent7-
dc.language영어-
dc.language.isoENG-
dc.publisherELSEVIER-
dc.titleHigh-mobility electrolyte-gated perovskite transistors on flexible plastic substrate via interface and composition engineering-
dc.typeArticle-
dc.publisher.location네델란드-
dc.identifier.doi10.1016/j.apsusc.2023.156984-
dc.identifier.scopusid2-s2.0-85150268248-
dc.identifier.wosid000956489000001-
dc.identifier.bibliographicCitationApplied Surface Science, v.623, pp 1 - 7-
dc.citation.titleApplied Surface Science-
dc.citation.volume623-
dc.citation.startPage1-
dc.citation.endPage7-
dc.type.docTypeArticle-
dc.description.isOpenAccessY-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryMaterials Science, Coatings & Films-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusENHANCEMENT-
dc.subject.keywordPlusDIELECTRICS-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordAuthorPerovskite transistors-
dc.subject.keywordAuthorInterfacial engineering-
dc.subject.keywordAuthorSolid-state electrolyte-
dc.subject.keywordAuthorFlexible transistors-
dc.subject.keywordAuthorConjugated polymers-
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