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Cited 55 time in webofscience Cited 55 time in scopus
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Ultrastable 1T-2H WS2 Heterostructures by Nanoarchitectonics of Phosphorus-Triggered Phase Transition for Hybrid Supercapacitorsopen access

Authors
Shinde, Pragati A.Chodankar, Nilesh R.Kim, Hyung-JinAbdelkareem, Mohammad AliAl Ghaferi, AmalHan, Young-KyuOlabi, Abdul GhaniAriga, Katsuhiko
Issue Date
Oct-2023
Publisher
American Chemical Society
Keywords
Electrodes; Phosphorus; Sulfur Compounds; Supercapacitor; Active Site; Current-collector; Dual Phase; Dual Phasis; Electrochemical Applications; Hybrid Supercapacitors; Interlayer Distance; Performance; Resulting Materials; Triggered Phase Transition; Tungsten Compounds
Citation
ACS Energy Letters, v.8, no.10, pp 4474 - 4487
Pages
14
Indexed
SCIE
SCOPUS
Journal Title
ACS Energy Letters
Volume
8
Number
10
Start Page
4474
End Page
4487
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/25848
DOI
10.1021/acsenergylett.3c01452
ISSN
2380-8195
2380-8195
Abstract
Tungsten disulfide (WS2) has recently emerged as a nontrivial material for electrochemical applications; however, boundaries associated with its 1T and 2H phases limit its performance. Here, this issue is addressed by evolving a dual-phase 1T-2H WS2 heterostructure that combines two different phases directly on the current collector. The resulting material demonstrated a 2D transformable phase structure, large interlayer distance, and highly exposed edge-active sites. Theoretical calculations confirmed that the 1T WS2 formed after phosphorus doping exhibits a semimetallic feature, elucidating a high electronic conductivity. The edge-enriched metallic phase and interlayer engineering of the 1T-2H WS2 heterostructure validate exceptional Na+ ion intercalation. The hybrid supercapacitor cell assembled with the 1T-2H WS2 anode and Prussian blue analogue (PBA) cathode shows a specific energy of 65.5 Wh kg(-1) at 784 W kg(-1), and 95.7% cycling stability. This work paves a technique for phase transition and sheds light on the expansion of efficient energy storage devices.
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