Cited 8 time in
Synthesis of Transition Metal Disulfides with Liquid Ammonium Sulfide as a Reliable Sulfur Precursor
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, Soo Ho | - |
| dc.contributor.author | Oh, Chang Seok | - |
| dc.contributor.author | Boandoh, Stephen | - |
| dc.contributor.author | Yang, Woochul | - |
| dc.contributor.author | Kim, Soo Min | - |
| dc.contributor.author | Kim, Ki Kang | - |
| dc.date.accessioned | 2024-09-26T15:30:49Z | - |
| dc.date.available | 2024-09-26T15:30:49Z | - |
| dc.date.issued | 2019-05 | - |
| dc.identifier.issn | 1225-8822 | - |
| dc.identifier.issn | 2288-6559 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/25669 | - |
| dc.description.abstract | We introduce liquid ammonium sulfide as a reliable and carbon-free sulfur precursor for synthesizing large-area transition metal disulfides (TMdS) in chemical vapor deposition. The flux of sulfur during TMdS growth is precisely controlled by passing a known amount of carrier gas through a bubbling system containing liquid ammonium sulfide. However, controlling the flux of sulfur through the conventional evaporation of sulfur powder using a heating belt remains a challenge. By achieving controllability of sulfur flux, we study growth kinetics such as nucleation density and growth rate. Furthermore, the continuous supply of the sulfur precursor results in the growth of a large-area monolayer and a few layers of MoS2 film. In addition, we present the feasibility of ammonium sulfide as an effective and clean precursor for the growth of a wide range of TMdS, thus enabling it to serve as a universal sulfur precursor. | - |
| dc.format.extent | 6 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | KOREAN VACUUM SOC | - |
| dc.title | Synthesis of Transition Metal Disulfides with Liquid Ammonium Sulfide as a Reliable Sulfur Precursor | - |
| dc.type | Article | - |
| dc.publisher.location | 대한민국 | - |
| dc.identifier.doi | 10.5757/ASCT.2019.28.3.60 | - |
| dc.identifier.scopusid | 2-s2.0-85090767041 | - |
| dc.identifier.bibliographicCitation | APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, v.28, no.3, pp 60 - 65 | - |
| dc.citation.title | APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY | - |
| dc.citation.volume | 28 | - |
| dc.citation.number | 3 | - |
| dc.citation.startPage | 60 | - |
| dc.citation.endPage | 65 | - |
| dc.type.docType | Article | - |
| dc.identifier.kciid | ART002471433 | - |
| dc.description.isOpenAccess | Y | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | esci | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | GRAPHENE | - |
| dc.subject.keywordPlus | GROWTH | - |
| dc.subject.keywordPlus | MOS2 | - |
| dc.subject.keywordPlus | CRYSTALS | - |
| dc.subject.keywordPlus | MOBILITY | - |
| dc.subject.keywordPlus | FILMS | - |
| dc.subject.keywordAuthor | Two-dimensional materials | - |
| dc.subject.keywordAuthor | Transition metal dichalcogenides | - |
| dc.subject.keywordAuthor | Chemical vapor deposition | - |
| dc.subject.keywordAuthor | Precursor | - |
| dc.subject.keywordAuthor | Ammonium sulfide | - |
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