Cited 142 time in
Perovskite solar cells with an MoS2 electron transport layer
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Singh, Ranbir | - |
| dc.contributor.author | Giri, Anupam | - |
| dc.contributor.author | Pal, Monalisa | - |
| dc.contributor.author | Thiyagarajan, Kaliannan | - |
| dc.contributor.author | Kwak, Junghyeok | - |
| dc.contributor.author | Lee, Jae-Joon | - |
| dc.contributor.author | Jeong, Unyong | - |
| dc.contributor.author | Cho, Kilwon | - |
| dc.date.accessioned | 2024-09-26T15:01:00Z | - |
| dc.date.available | 2024-09-26T15:01:00Z | - |
| dc.date.issued | 2019-03 | - |
| dc.identifier.issn | 2050-7488 | - |
| dc.identifier.issn | 2050-7496 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/25561 | - |
| dc.description.abstract | There is an ongoing drive to search for low-temperature processed, stable and efficient electron transport layers (ETLs) for perovskite solar cells (PSCs). Herein, we report, for the first time, the use of a MoS2 thin layer as the ETL for PSCs. MoS2 transparent thin films are directly synthesized on the glass/fluorine doped tin oxide (FTO) substrate by using microwave irradiation. The electrical characteristics of the MoS2 thin film are measured and compared with state-of-the-art efficient electron transporting materials like TiO2 and SnO2. The perovskite solar cells fabricated with the device structure, glass/FTO/MoS2/perovskite/po-spiro-OMeTAD/Au, exhibit a power conversion efficiency (PCE) of 13.1%, which is close to the PCEs obtained from compact TiO2 and SnO2 ETL based PSCs. Good transparency in the visible region (400-900 nm), high electrical conductivity and better charge transfer properties as well as low-temperature synthesis make the MoS2 thin film useful for energy harvesting and other optoelectronic device applications. | - |
| dc.format.extent | 8 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | ROYAL SOC CHEMISTRY | - |
| dc.title | Perovskite solar cells with an MoS2 electron transport layer | - |
| dc.type | Article | - |
| dc.publisher.location | 영국 | - |
| dc.identifier.doi | 10.1039/c8ta12254g | - |
| dc.identifier.scopusid | 2-s2.0-85063137228 | - |
| dc.identifier.wosid | 000463814800055 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY A, v.7, no.12, pp 7151 - 7158 | - |
| dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY A | - |
| dc.citation.volume | 7 | - |
| dc.citation.number | 12 | - |
| dc.citation.startPage | 7151 | - |
| dc.citation.endPage | 7158 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Energy & Fuels | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
| dc.relation.journalWebOfScienceCategory | Energy & Fuels | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.subject.keywordPlus | OPEN-CIRCUIT VOLTAGE | - |
| dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
| dc.subject.keywordPlus | HIGHLY EFFICIENT | - |
| dc.subject.keywordPlus | COMPACT LAYER | - |
| dc.subject.keywordPlus | TEMPERATURE | - |
| dc.subject.keywordPlus | TIO2 | - |
| dc.subject.keywordPlus | HOLE | - |
| dc.subject.keywordPlus | SNO2 | - |
| dc.subject.keywordPlus | RECOMBINATION | - |
| dc.subject.keywordPlus | DEPOSITION | - |
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