Improved Memory Effect of ZnO Nanorods Embedded in an Insulating Polymethylmethacrylate Layer

Abstract

Fabrication and characterization of memory devices using ZnO nanorod layer grown by chemical-bath method is reported. The fabricated memory device was found exhibit electrical bistability and nonvolatile memory phenomenon. An additional Polymethylmethacrylate (PMMA) polymer layer coated on ITO substrate prior to nanorod deposition has been found improve the LRS/HRS ratio of the device. The current-voltage characteristics of the memory devices are discussed in terms of formation and rupture of conductive filaments. The devices have shown consistent electrical bistable behavior even for 10(5) resistance-switching cycles. This hybrid ITO/PMMA-ZnO NRs/AI device has potential applications in the field of bistable random access memories.