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Effect of electron-donating unit on crystallinity and charge transport in organic field-effect transistors with thienoisoindigo-based small molecules

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dc.contributor.authorNketia-Yawson, Benjamin-
dc.contributor.authorKang, Hyojin-
dc.contributor.authorShin, Eul-Yong-
dc.contributor.authorXu, Yong-
dc.contributor.authorYang, Changduk-
dc.contributor.authorNoh, Yong-Young-
dc.date.accessioned2024-09-26T14:01:10Z-
dc.date.available2024-09-26T14:01:10Z-
dc.date.issued2015-11-
dc.identifier.issn1566-1199-
dc.identifier.issn1878-5530-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/25327-
dc.description.abstractWe report the effect of an electron-donating unit on solid-state crystal orientation and charge transport in organic field-effect transistors (OFETs) with thienoisoindigo (TIIG)-based small molecules. End-capping of different electron-donor moieties [benzene (Bz), naphthalene (Np), and benzofuran (Bf)] onto TIIG (giving TIIG-Bz, TIIG-Np, and TIIG-Bf) is resulted in different electronic energy levels, solid-state morphologies and performance in OFETs. The 80 degrees C post-annealed TIIG-Np OFETs show the best device performance with a best hole mobility of 0.019 cm(2) V (1) s (1) and threshold voltage of -8.6 +/- 0.9 V using top gate/bottom contact geometry and a CYTOP gate dielectric. We further investigated the morphological microstructure of the TIIG-based small molecules by using grazing incidence wide angle X-ray scattering, atomic force microscopy and a polarized optical microscope. The electronic transport levels of the TIIG-based small molecules in thin-film states were investigated using ultraviolet photoelectron spectroscopy to examine the charge injection properties of the gold electrode. (C) 2015 Elsevier B.V. All rights reserved.-
dc.format.extent7-
dc.language영어-
dc.language.isoENG-
dc.publisherELSEVIER SCIENCE BV-
dc.titleEffect of electron-donating unit on crystallinity and charge transport in organic field-effect transistors with thienoisoindigo-based small molecules-
dc.typeArticle-
dc.publisher.location네델란드-
dc.identifier.doi10.1016/j.orgel.2015.07.038-
dc.identifier.scopusid2-s2.0-84937441879-
dc.identifier.wosid000361226900024-
dc.identifier.bibliographicCitationORGANIC ELECTRONICS, v.26, pp 151 - 157-
dc.citation.titleORGANIC ELECTRONICS-
dc.citation.volume26-
dc.citation.startPage151-
dc.citation.endPage157-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusPOLYMER-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordAuthorOrganic field-effect transistor-
dc.subject.keywordAuthorConjugated molecules-
dc.subject.keywordAuthorThienoisoindigo-
dc.subject.keywordAuthorCrystallinity-
dc.subject.keywordAuthorContact resistance-
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College of Engineering (Department of Energy and Materials Engineering)
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