Chemically-derived CuO/In2O3-based nanocomposite for diode applications

Abstract

Nowadays, oxide-based semiconducting nanostructures are widely regarded as one of the most essential elements of the modern semiconductor industry and for a number of advanced technological functions in electronics and optoelectronic platforms. In this regard, a CuO-based nanocomposite was synthesized through a facile surfactant-free wet chemical strategy, and its potential for photoelectronic applications has been demonstrated. The nature of the composite phase and its other structural characteristics were studied in detail using Raman and X-ray photoelectron spectroscopic tools. The particulate characteristics of the composite were inferred using transmission electron microscopic measurements. Room temperature luminescence measurements revealed that the optical activity of the composite spreads across the red and near-infrared region of the electromagnetic spectrum through corresponding transitions. The optoelectronic capabilities of the processed composite were investigated through fabricating a CuO composite/ZnO nanowire-based p-n heterostructure and studying its associated current-voltage (I-V) characteristics under photon illumination. The nature of charge carriers, flat band potential, charge transfer resistance and carrier density were also studied individually and collectively for each component comprising the heterostructure through Mott-Schottky and Nyquist type impedance plots.