Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example

Abstract

The effects of Hf content on the radiation hardness of Hf-In-Zn-O thin-film transistors (HIZO TFTs) andHIZO TFT-based circuits are systemicallyexamined. The evaluated circuits, including current-starved ring oscillator, energy harvesting, and RF circuits, are essential for space electronic systems. It is shown that HIZO TFTs with low Hf concentration have better initial performance while TFTs with highHf concentrationaremore stable against radiation. On the other hand, for circuit application, the stable HIZO TFTs are not necessarily preferred for all circuits. This letter demonstrates that understanding the device-circuit interactions is necessary for device optimization and circuit reliability improvements for harsh electronic systems.