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Controlling the number of graphene sheets exfoliated from graphite by designed normal loading and frictional motion
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, S. | - |
| dc.contributor.author | Lu, W. | - |
| dc.date.accessioned | 2024-09-26T13:02:05Z | - |
| dc.date.available | 2024-09-26T13:02:05Z | - |
| dc.date.issued | 2014-07 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.issn | 1089-7550 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/25081 | - |
| dc.description.abstract | We use molecular dynamics to study the exfoliation of patterned nanometer-sized graphite under various normal loading conditions for friction-induced exfoliation. Using highly ordered pyrolytic graphite (HOPG) as well as both amorphous and crystalline SiO2 substrate as example systems, we show that the exfoliation process is attributed to the corrugation of the HOPG surface and the atomistic roughness of the substrate when they contact under normal loading. The critical normal strain, at which the exfoliation occurs, is higher on a crystalline substrate than on an amorphous substrate. This effect is related to the atomistic flatness and stiffness of the crystalline surface. We observe that an increase of the van der Waals interaction between the graphite and the substrate results in a decrease of the critical normal strain for exfoliation. We find that the magnitude of the normal strain can effectively control the number of exfoliated graphene layers. This mechanism suggests a promising approach of applying designed normal loading while sliding to pattern controlled number of graphene layers or other two-dimensional materials on a substrate surface. © 2014 AIP Publishing LLC. | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | AIP Publishing | - |
| dc.title | Controlling the number of graphene sheets exfoliated from graphite by designed normal loading and frictional motion | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1063/1.4889924 | - |
| dc.identifier.scopusid | 2-s2.0-84904301170 | - |
| dc.identifier.bibliographicCitation | Journal of Applied Physics, v.116, no.2 | - |
| dc.citation.title | Journal of Applied Physics | - |
| dc.citation.volume | 116 | - |
| dc.citation.number | 2 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
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