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Near Infrared light emitting from InN/InGaN/GaN Dot-in-a-Nanorod Heterostructure
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Sang-Tae | - |
| dc.contributor.author | Choi, Hyo-Seok | - |
| dc.contributor.author | Park, Byung-Guon | - |
| dc.contributor.author | Kim, Kyung-Jin | - |
| dc.contributor.author | Kim, Moon-Deock | - |
| dc.contributor.author | Kim, Song-Gang | - |
| dc.contributor.author | Yang, Woo-chul | - |
| dc.date.accessioned | 2024-09-26T12:00:54Z | - |
| dc.date.available | 2024-09-26T12:00:54Z | - |
| dc.date.issued | 2013 | - |
| dc.identifier.issn | 2160-9020 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/24896 | - |
| dc.description.abstract | We report on the light emitting of InN/InGaN/GaN dot-in-a-nanorods heterostructure grown on Si(111) substrates using plasma-assisted molecular beam epitaxy. Sharp and isolated single exciton emission line in the near infrared spectral range was observed. | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | IEEE | - |
| dc.title | Near Infrared light emitting from InN/InGaN/GaN Dot-in-a-Nanorod Heterostructure | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.wosid | 000355262504014 | - |
| dc.identifier.bibliographicCitation | 2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | - |
| dc.citation.title | 2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | - |
| dc.type.docType | Proceedings Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Optics | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Optics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
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