IONIC LIQUID CATALYZED ELECTROLYTE FOR ELECTROCHEMICAL POLYANILINE SUPERCAPACITORS
- Authors
- Inamdar, A. I.; Im, Hyunsik; Jung, Woong; Kim, Hyungsang; Kim, Byungchul; Yu, Kook-Hyun; Kim, Jin-Sang; Hwang, Sung-Min
- Issue Date
- 2013
- Publisher
- WORLD SCIENTIFIC PUBL CO PTE LTD
- Citation
- PHYSICS, CHEMISTRY AND APPLICATIONS OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES, pp 263 - 266
- Pages
- 4
- Journal Title
- PHYSICS, CHEMISTRY AND APPLICATIONS OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES
- Start Page
- 263
- End Page
- 266
- URI
- https://scholarworks.dongguk.edu/handle/sw.dongguk/24892
- Abstract
- The effect of different wt.% of ionic liquid "1,6-bis (trimethylammonium-1-yl) hexane tetrafluoroborate" in 0.5 M LiClO4+PC electrolyte on the supercapacitor properties of polyaniline (PANI) thin film are investigated. The PANI film is synthesized using electro-polymerization of aniline in the presence of sulfuric acid. The electrochemical properties of the PANI thin film are studied by cyclic voltammetry, galvanostatic charge-discharge and electrochemical impedance spectroscopy (EIS) measurements. The optimum amount of the ionic liquid is found to be 2 wt.% which provides better ionic conductivity of the electrolyte. The highest specific capacitance of 259 F/g is obtained using the 2 wt.% electrolyte. This capacitance remains at up to 208 F/g (80% capacity retention) after 1000 charge-discharge cycles at a current density of 0.5 mA/g. The PANI film in the 2 wt.% ionic liquid catalyzed 0.5 M LiClO4+PC electrolyte shows small electrochemical resistance, better rate performance and higher cyclability. The increased ionic conductivity of the 2 wt.% ionic liquid catalyzed electrolyte causes a reduction in resistance at the electrode/electrolyte interface, which can be useful in electrochemically-preferred power devices for better applicability.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Natural Science > Department of Physics > 1. Journal Articles
- College of Advanced Convergence Engineering > Division of System Semiconductor > 1. Journal Articles

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.