Cited 12 time in
Effects of Ti additives on structural and electric properties of Cr- and Ti-codoped ZnO layers
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Sejoon | - |
| dc.contributor.author | Lee, Youngmin | - |
| dc.contributor.author | Kim, Deuk Young | - |
| dc.contributor.author | Kang, Tae Won | - |
| dc.date.accessioned | 2024-09-26T11:00:34Z | - |
| dc.date.available | 2024-09-26T11:00:34Z | - |
| dc.date.issued | 2013-08 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.issn | 1089-7550 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/24642 | - |
| dc.description.abstract | We investigate the effects of Ti-codoping on the structural and electrical properties of the ZnCrTiO layers grown on the Pt (111)/Ti/Al2O3 (0001) substrates by co-sputtering of ZnCrO and Ti. The ZnCrTiO layers with the Ti contents of 0.2-0.3 at.% reveal the enhanced disorder-activated Raman modes, attributing to increased lattice-displacement-induced phonon scattering due to the incorporation of Ti additives. In comparison with ZnCrO, the ZnCrTiO layers exhibit the improved ferroelectric properties with one order of magnitude-increased remnant polarization. This causes a polarization-dependent asymmetric hysteresis behavior in the Pt/ZnCrTiO/Pt top-to-bottom metal-ferroelectric-metal device, suggesting potential applications for two-terminal ferroelectric-tunneling resistive memories. (C) 2013 AIP Publishing LLC. | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.title | Effects of Ti additives on structural and electric properties of Cr- and Ti-codoped ZnO layers | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1063/1.4817765 | - |
| dc.identifier.scopusid | 2-s2.0-84883366304 | - |
| dc.identifier.wosid | 000323177100058 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.114, no.6 | - |
| dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.volume | 114 | - |
| dc.citation.number | 6 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | THIN-FILMS | - |
| dc.subject.keywordPlus | DOPED ZNO | - |
| dc.subject.keywordPlus | MAGNETIC-PROPERTIES | - |
| dc.subject.keywordPlus | RAMAN-SCATTERING | - |
| dc.subject.keywordPlus | RESISTIVE MEMORY | - |
| dc.subject.keywordPlus | (ZN0.93MN0.07)O | - |
| dc.subject.keywordPlus | FERROMAGNETISM | - |
| dc.subject.keywordPlus | TRANSITION | - |
| dc.subject.keywordPlus | BEHAVIOR | - |
| dc.subject.keywordPlus | DEVICES | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
30, Pildong-ro 1-gil, Jung-gu, Seoul, 04620, Republic of Korea+82-2-2260-3114
Copyright(c) 2023 DONGGUK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.
