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Effects of Ti additives on structural and electric properties of Cr- and Ti-codoped ZnO layers

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dc.contributor.authorLee, Sejoon-
dc.contributor.authorLee, Youngmin-
dc.contributor.authorKim, Deuk Young-
dc.contributor.authorKang, Tae Won-
dc.date.accessioned2024-09-26T11:00:34Z-
dc.date.available2024-09-26T11:00:34Z-
dc.date.issued2013-08-
dc.identifier.issn0021-8979-
dc.identifier.issn1089-7550-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/24642-
dc.description.abstractWe investigate the effects of Ti-codoping on the structural and electrical properties of the ZnCrTiO layers grown on the Pt (111)/Ti/Al2O3 (0001) substrates by co-sputtering of ZnCrO and Ti. The ZnCrTiO layers with the Ti contents of 0.2-0.3 at.% reveal the enhanced disorder-activated Raman modes, attributing to increased lattice-displacement-induced phonon scattering due to the incorporation of Ti additives. In comparison with ZnCrO, the ZnCrTiO layers exhibit the improved ferroelectric properties with one order of magnitude-increased remnant polarization. This causes a polarization-dependent asymmetric hysteresis behavior in the Pt/ZnCrTiO/Pt top-to-bottom metal-ferroelectric-metal device, suggesting potential applications for two-terminal ferroelectric-tunneling resistive memories. (C) 2013 AIP Publishing LLC.-
dc.language영어-
dc.language.isoENG-
dc.publisherAMER INST PHYSICS-
dc.titleEffects of Ti additives on structural and electric properties of Cr- and Ti-codoped ZnO layers-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1063/1.4817765-
dc.identifier.scopusid2-s2.0-84883366304-
dc.identifier.wosid000323177100058-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.114, no.6-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume114-
dc.citation.number6-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusDOPED ZNO-
dc.subject.keywordPlusMAGNETIC-PROPERTIES-
dc.subject.keywordPlusRAMAN-SCATTERING-
dc.subject.keywordPlusRESISTIVE MEMORY-
dc.subject.keywordPlus(ZN0.93MN0.07)O-
dc.subject.keywordPlusFERROMAGNETISM-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusBEHAVIOR-
dc.subject.keywordPlusDEVICES-
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College of Natural Science > Division of Physics & Semiconductor Science > 1. Journal Articles
College of Advanced Convergence Engineering > Division of System Semiconductor > 1. Journal Articles

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