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Effects of applied electric fields on the optical properties of CdZnO quantum well structures

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dc.contributor.authorJeon, H. C.-
dc.contributor.authorPark, S. H.-
dc.contributor.authorLee, S. J.-
dc.contributor.authorKang, T. W.-
dc.contributor.authorIhm, G.-
dc.date.accessioned2024-09-26T11:00:32Z-
dc.date.available2024-09-26T11:00:32Z-
dc.date.issued2013-12-
dc.identifier.issn0295-5075-
dc.identifier.issn1286-4854-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/24637-
dc.description.abstractCdZnO/MgZnO QW structures with higher Cd quantity are found to have smaller optical gain because of the strain-induced piezoelectric polarization and the spontaneous polarization. These strain-induced polarizations can be reduced effectively by applied electric fields in CdZnO/ZnMgO QW structures with high Cd quantity. For optical properties of CdZnO/MgZnO QW structures, the optical gain is increased because the internal field is compensated with the reverse field, confirmed by Stark shifts. These results demonstrate that a high-performance optical-devices operation can be realized in CdZnO/MgZnO QW structures by eliminating the droop phenomenon.-
dc.language영어-
dc.language.isoENG-
dc.publisherIOP PUBLISHING LTD-
dc.titleEffects of applied electric fields on the optical properties of CdZnO quantum well structures-
dc.typeArticle-
dc.publisher.location영국-
dc.identifier.doi10.1209/0295-5075/104/67003-
dc.identifier.scopusid2-s2.0-84892657482-
dc.identifier.wosid000330618500020-
dc.identifier.bibliographicCitationEPL, v.104, no.6-
dc.citation.titleEPL-
dc.citation.volume104-
dc.citation.number6-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.subject.keywordPlusGAIN-
dc.subject.keywordPlusEFFICIENCY-
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