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Cited 38 time in webofscience Cited 41 time in scopus
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Back-gate tuning of Schottky barrier height in graphene/zinc-oxide photodiodes

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dc.contributor.authorLee, Sejoon-
dc.contributor.authorLee, Youngmin-
dc.contributor.authorKim, Deuk Young-
dc.contributor.authorSong, Emil B.-
dc.contributor.authorKim, Sung Min-
dc.date.accessioned2024-09-26T11:00:31Z-
dc.date.available2024-09-26T11:00:31Z-
dc.date.issued2013-06-
dc.identifier.issn0003-6951-
dc.identifier.issn1077-3118-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/24635-
dc.description.abstractWe demonstrate back-gate-tuning of the Schottky barrier height in graphene/zinc oxide photodiodes that are devised by a selective sputter-growth of ZnO on pre-patterned single-layer graphene sheets. The devices show a clear rectifying behavior (e. g., Schottky barrier height similar to 0.65 eV and ideality factor similar to 1.15) and an improvement in the photo-response via application of a back-gate voltage. The back-gate bias tunes the effective Schottky barrier-height and also promotes the activation of photo-excited carriers, which leads to an enhancement in the thermionic emission process. (C) 2013 AIP Publishing LLC.-
dc.language영어-
dc.language.isoENG-
dc.publisherAMER INST PHYSICS-
dc.titleBack-gate tuning of Schottky barrier height in graphene/zinc-oxide photodiodes-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1063/1.4812198-
dc.identifier.scopusid2-s2.0-84879816259-
dc.identifier.wosid000320962400055-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.102, no.24-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume102-
dc.citation.number24-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusCONTACTS-
dc.subject.keywordPlusZNO-
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College of Natural Science > Division of Physics & Semiconductor Science > 1. Journal Articles
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College of Advanced Convergence Engineering (Division of System Semiconductor)
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