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Highly Stable All-Inorganic Pb-Free Perovskite Solar Cells
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Heo, Jin Hyuck | - |
| dc.contributor.author | Lee, Min Ho | - |
| dc.contributor.author | Song, Dae Ho | - |
| dc.contributor.author | Aung, Nang Mya Su | - |
| dc.contributor.author | Lee, Jae-Joon | - |
| dc.contributor.author | Song, Chang Eun | - |
| dc.contributor.author | Hong, Ki-Ha | - |
| dc.contributor.author | Im, Sang Hyuk | - |
| dc.date.accessioned | 2024-09-26T10:01:20Z | - |
| dc.date.available | 2024-09-26T10:01:20Z | - |
| dc.date.issued | 2018-12 | - |
| dc.identifier.issn | 1555-130X | - |
| dc.identifier.issn | 1555-1318 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/24395 | - |
| dc.description.abstract | Thermally stable planar Pb-free Cs3Bi2I9 perovskite solar cells were fabricated using glass, ITO, ZnO, Cs3Bi2I9, Cul, and Au as the transparent substrate, transparent conducting electrode, electron-transporting layer, light absorption layer, hole-transporting layer, and counter electrode, respectively. Planar Cs3Bi2I9 perovskite solar cells with a Cul hole-transporting layer produced a power conversion efficiency of 9.0 and 9.2% at an illumination of 1 sun (100 mW/cm(2)) for forward and reverse scans, respectively. They also maintained their initial efficiency following heat treatment at 200 degrees C in air due to the high thermal stability of Cul, whereas Cs3Bi2I9 perovskite solar cells with a poly-triarylamine hole-transporting layer exhibited a rapid degradation in power conversion efficiency. | - |
| dc.format.extent | 5 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
| dc.title | Highly Stable All-Inorganic Pb-Free Perovskite Solar Cells | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1166/jno.2018.2407 | - |
| dc.identifier.wosid | 000454144700003 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.13, no.12, pp 1764 - 1768 | - |
| dc.citation.title | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | - |
| dc.citation.volume | 13 | - |
| dc.citation.number | 12 | - |
| dc.citation.startPage | 1764 | - |
| dc.citation.endPage | 1768 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | LEAD-FREE | - |
| dc.subject.keywordAuthor | Bismuth | - |
| dc.subject.keywordAuthor | Pb-Free | - |
| dc.subject.keywordAuthor | Perovskite | - |
| dc.subject.keywordAuthor | Cul | - |
| dc.subject.keywordAuthor | Solar Cells | - |
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