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Enhanced Structural and Luminescent Properties of Carbon-Assisted ZnO Nanorod Arrays on (100) Si Substrate

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dc.contributor.authorYoon, Im Taek-
dc.contributor.authorCho, Hak Dong-
dc.contributor.authorLee, Sejoon-
dc.contributor.authorRoshchupkin, Dmitry V.-
dc.date.accessioned2024-09-26T10:01:12Z-
dc.date.available2024-09-26T10:01:12Z-
dc.date.issued2018-08-
dc.identifier.issn0361-5235-
dc.identifier.issn1543-186X-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/24379-
dc.description.abstractWe have fabricated as-grown ZnO nanorods (NRs) and carbon-assisted NR arrays on semi-insulating (100)-oriented Si substrates. We compared the structural and luminescent properties of them. High-resolution transmission microscopy, field emission scanning electron microscopy, x-ray diffraction and energy-dispersive x-ray revealed that the as-grown ZnO NRs and carbon-assisted ZnO NRs were single crystals with a hexagonal wurtzite structure, and grew with a c-axis orientation perpendicular to the Si substrate. These measurements show that the carbon-assisted ZnO NRs were better synthesized vertically on an Si substrate compared to the as-grown ZnO NRs. Photoluminescence measurements showed that luminescence intensity of the carbon-assisted ZnO NRs was enhanced compared to the as-grown ZnO NRs. The enhanced luminescence intensity of the carbon-assisted ZnO demonstrates the possible improvement in the performance of photovoltaic nanodevices based on ZnO-like materials. This method can be applied to the fabrication of well-aligned ZnO NRs used widely in optoelectronic devices.-
dc.format.extent8-
dc.language영어-
dc.language.isoENG-
dc.publisherSPRINGER-
dc.titleEnhanced Structural and Luminescent Properties of Carbon-Assisted ZnO Nanorod Arrays on (100) Si Substrate-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1007/s11664-018-6106-z-
dc.identifier.scopusid2-s2.0-85042091836-
dc.identifier.wosid000437146400033-
dc.identifier.bibliographicCitationJOURNAL OF ELECTRONIC MATERIALS, v.47, no.8, pp 4404 - 4411-
dc.citation.titleJOURNAL OF ELECTRONIC MATERIALS-
dc.citation.volume47-
dc.citation.number8-
dc.citation.startPage4404-
dc.citation.endPage4411-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusUV PHOTODETECTORS-
dc.subject.keywordPlusZINC-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusPHOTOLUMINESCENCE-
dc.subject.keywordPlusFABRICATION-
dc.subject.keywordPlusNANOWIRES-
dc.subject.keywordPlusBIOSENSOR-
dc.subject.keywordPlusFILMS-
dc.subject.keywordAuthorZnO nanorods-
dc.subject.keywordAuthorsingle crystal-
dc.subject.keywordAuthorchemical vapor deposition-
dc.subject.keywordAuthorluminescence-
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