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Oxygen ion drift-driven dual bipolar hysteresis curves in a single Pt/Ta2O5-x/TiOxNy framework
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Ah Rahm | - |
| dc.contributor.author | Bae, Yoon Cheol | - |
| dc.contributor.author | Baek, Gwang Ho | - |
| dc.contributor.author | Chung, Je Bock | - |
| dc.contributor.author | Kang, Tae Sung | - |
| dc.contributor.author | Lee, Jong Sun | - |
| dc.contributor.author | Park, Jea-Gun | - |
| dc.contributor.author | Im, Hyun Sik | - |
| dc.contributor.author | Hong, Jin Pyo | - |
| dc.date.accessioned | 2024-09-26T09:03:16Z | - |
| dc.date.available | 2024-09-26T09:03:16Z | - |
| dc.date.issued | 2013-10-28 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.issn | 1077-3118 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/23970 | - |
| dc.description.abstract | We describe abnormal dual bipolar resistive switching events in simple Pt/Ta2O5-x/TiOxNy and Pt/Ta2O5-x/TiN matrices in which the typical switching directions (SD) are initially clockwise (CW). The negative difference region in a high resistance state before reaching the typical "CW set" process enables the SD transition to a counterclockwise direction. It thereby emphasizes the occurrence of a highly stable secondary bipolar resistive switching curve. The origin of two different switching modes is described by adapting a bias-dependent oxygen ion accumulation and depletion process at TiOxNy and TiN electrode interfaces and by performing various structural analyses. (C) 2013 AIP Publishing LLC. | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.title | Oxygen ion drift-driven dual bipolar hysteresis curves in a single Pt/Ta2O5-x/TiOxNy framework | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1063/1.4828561 | - |
| dc.identifier.scopusid | 2-s2.0-84889685278 | - |
| dc.identifier.wosid | 000327816000096 | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.103, no.18 | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 103 | - |
| dc.citation.number | 18 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | RESISTIVE SWITCHING MEMORIES | - |
| dc.subject.keywordPlus | THIN-FILMS | - |
| dc.subject.keywordPlus | DEPOSITION | - |
| dc.subject.keywordPlus | MECHANISM | - |
| dc.subject.keywordPlus | DEVICES | - |
| dc.subject.keywordPlus | LAYER | - |
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