Hysteresis I-V nature of mechanically exfoliated graphene FET

Abstract

Graphene is an attractive material for device applications due to its excellent electrical and mechanical properties. The mechanical exfoliation is an attractive method to fabricate graphene devices using mono and multilayer graphene flakes. As the graphene is very sensitive to atmosphere the occurrence of hysteresis and p-doping is common. This paper reports electrical characterization and hysteresis effect of graphene field effect transistor (FET) fabricated using mechanically exfoliated graphene flakes. Raman spectra and atomic force microscopy techniques have been used to examine the quality and thickness of the exfoliated graphene. This fabricated graphene FET has shown hysteresis nature with p-type doping. The possible reason for the observed hysteresis and p-doping has been explained.