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Observation of bias-dependent noise sources in a TiOx/TiOy bipolar resistive switching frame

Authors
Kim, Joo HyungLee, Ah RahmBae, Yoon CheolBaek, Kwang HoIm, Hyun SikHong, Jin Pyo
Issue Date
24-Feb-2014
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.104, no.8
Indexed
SCI
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
104
Number
8
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/23918
DOI
10.1063/1.4865783
ISSN
0003-6951
1077-3118
Abstract
We report the conduction features associated with the evolution of oxygen ions (or vacancies) under bias for a TiOx (oxygen ion-rich)/TiOy (oxygen ion-deficient) bi-layer cell by identifying low-frequency noise sources. It is believed that a low resistance state enhances the formation of conductive filaments exchanging electrons through a nearest-neighbor hopping process, while a high resistance state (HRS) emphasizes the rupture of conductive filaments inside the insulating TiOx layer and a reduction/oxidation reaction at the oxide interfaces. The high resolution transmission electron microscope images of as-grown and HRS cells are also discussed. (C) 2014 AIP Publishing LLC.
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