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Effect of Trisodium Citrate Concentration on the Structural and Photodiode Performance of CdO Thin Films

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dc.contributor.authorRavikumar, M.-
dc.contributor.authorValanarasu, S.-
dc.contributor.authorChandramohan, R.-
dc.contributor.authorJacob, S. Santhosh Kumar-
dc.contributor.authorKathalingam, A.-
dc.date.accessioned2024-09-26T09:03:05Z-
dc.date.available2024-09-26T09:03:05Z-
dc.date.issued2015-08-
dc.identifier.issn0361-5235-
dc.identifier.issn1543-186X-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/23901-
dc.description.abstractCdO thin films were deposited on glass and silicon substrates by simple perfume atomizer at 350A degrees C using cadmium acetate and trisodium citrate (TSC). The effect of the TSC concentration on the structural, morphological, optical, and photoconductive properties of the prepared CdO thin films was investigated. X-Ray diffraction (XRD) studies of the deposited films revealed improvement in crystalline nature with increase of TSC concentration. Films prepared without TSC showed porous nature, not fully covering the substrate, whereas films prepared using TSC exhibited full coverage of the substrate with uniform particles. Optical transmittance study of the films showed high transmittance (50% to 60%), and the absorption edge was found to shift towards the red region depending on the TSC concentration. The films exhibited a direct band-to-band transition with bandgap varying between 2.31 eV and 2.12 eV. Photoconductivity studies of the n-CdO/p-Si structure for various TSC concentrations were also carried out. I-V characteristics of this n-CdO/p-Si structure revealed the formation of rectifying junctions, and its photoconductivity was found to increase with the TSC concentration.-
dc.format.extent7-
dc.language영어-
dc.language.isoENG-
dc.publisherSPRINGER-
dc.titleEffect of Trisodium Citrate Concentration on the Structural and Photodiode Performance of CdO Thin Films-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1007/s11664-015-3759-8-
dc.identifier.scopusid2-s2.0-84933556218-
dc.identifier.wosid000357041400034-
dc.identifier.bibliographicCitationJOURNAL OF ELECTRONIC MATERIALS, v.44, no.8, pp 2800 - 2806-
dc.citation.titleJOURNAL OF ELECTRONIC MATERIALS-
dc.citation.volume44-
dc.citation.number8-
dc.citation.startPage2800-
dc.citation.endPage2806-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusCADMIUM-OXIDE FILMS-
dc.subject.keywordPlusOPTOELECTRONIC PROPERTIES-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlusCOMPLEXING AGENT-
dc.subject.keywordPlusSOLAR-CELLS-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusZNS-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordAuthorPerfume atomizer-
dc.subject.keywordAuthorCdO thin films-
dc.subject.keywordAuthorheterostructure-
dc.subject.keywordAuthorphotodiode-
dc.subject.keywordAuthorelectrical studies-
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