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Plasmonic nanocavity as a spectroscopic probe for molecules
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Do Wan | - |
| dc.contributor.author | Jang, Jae -Won | - |
| dc.date.accessioned | 2023-04-27T08:41:06Z | - |
| dc.date.available | 2023-04-27T08:41:06Z | - |
| dc.date.issued | 2022-10 | - |
| dc.identifier.issn | 2590-2393 | - |
| dc.identifier.issn | 2590-2385 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/2347 | - |
| dc.description.abstract | Plasmonic nanocavities have a promising future in various fields such as plasmon-mediated chemical reactions. Yet unresolved questions remain for the physical process and chemical reaction at the surface of the metal. In a recent study published in Nature Nanotechnology, Oksenberg et al. constructed energy-tunable nanoreactors with different chemical environments, revealing distinct plasmon-driven chemical reactions. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Elsevier | - |
| dc.title | Plasmonic nanocavity as a spectroscopic probe for molecules | - |
| dc.type | Article | - |
| dc.publisher.location | 네델란드 | - |
| dc.identifier.doi | 10.1016/j.matt.2022.08.008 | - |
| dc.identifier.scopusid | 2-s2.0-85139303461 | - |
| dc.identifier.wosid | 000869186300012 | - |
| dc.identifier.bibliographicCitation | Matter, v.5, no.10, pp 3102 - 3104 | - |
| dc.citation.title | Matter | - |
| dc.citation.volume | 5 | - |
| dc.citation.number | 10 | - |
| dc.citation.startPage | 3102 | - |
| dc.citation.endPage | 3104 | - |
| dc.type.docType | Editorial Material | - |
| dc.description.isOpenAccess | Y | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
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Related Researcher
- Jang, Jae Won
- College of Advanced Convergence Engineering (Division of System Semiconductor)