Ferroelectric polarization-induced memristive hysteresis behaviors in Ti- and Mn-codoped ZnO

Abstract

ZnTiMnO layers grown on Pt (111)/A(l2)O(3) (0001) substrates exhibit lattice displacement-induced ferroelectric features, which arise from a modulation in the lattice translation symmetry and originate from the substitution of Ti and Mn ions at Zn sites in ZnO's host lattices. After annealing at 900A degrees C, the ZnTiMnO layer shows a clear hysteresis loop, where the maximum polarization is fully saturated within wide electric-field regions. The top-to-bottom Pt/ZnTiMnO/Pt device reveals a polarization-dependent asymmetric hysteresis (i.e., ferroelectric memristive-switching); in addition, the device shows > 60% data-retention per 10 years. These results suggest that ZnTiMnO holds great promise for use in ferroelectric memristive-switching devices.