Effects of Seed-Layer N2O Plasma Treatment on ZnO Nanorod Based Ultraviolet Photodetectors: Experimental Investigation with Two Different Device Structures

Abstract

The crystalline quality of ZnO NR (nanorod) as a sensing material for visible blind ultraviolet PDs (photodetectors) critically depends on the SL (seed layer) material of properties, which is a key to high-quality nanocrystallite growth, more so than the synthesis method. In this study, we fabricated two different device structures of a gateless AlGaN/GaN HEMT (high electron mobility transistor) and a photoconductive PD structure with an IDE (interdigitated electrode) pattern implemented on a PET (polyethylene terephthalate) flexible substrate, and investigated the impact on device performance through the SL N2O plasma treatment. In case of HEMT-based PD, the highest current on-off ratio (similar to 7) and spectral responsivity R (similar to 1.5 x 10(5) A/W) were obtained from the treatment for 6 min, whereas the IDE pattern-based PD showed the best performance (on-off ratio = similar to 44, R = similar to 69 A/W) from the treatment for 3 min and above, during which a significant etch damage on PET substrates was produced. This improvement in device performance was due to the enhancement in NR crystalline quality as revealed by our X-ray diffraction, photoluminescence, and microanalysis.