Cited 44 time in
Morphological tuning of CuO nanostructures by simple preparative parameters in SILAR method and their consequent effect on supercapacitors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Shinde, S.K. | - |
| dc.contributor.author | Dubal, D.P. | - |
| dc.contributor.author | Ghodake, G.S. | - |
| dc.contributor.author | Kim, D.Y. | - |
| dc.contributor.author | Fulari, V.J. | - |
| dc.date.accessioned | 2024-08-08T06:30:44Z | - |
| dc.date.available | 2024-08-08T06:30:44Z | - |
| dc.date.issued | 2016-04-01 | - |
| dc.identifier.issn | 2352-507X | - |
| dc.identifier.issn | 2352-507X | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/18964 | - |
| dc.description.abstract | Morphology-controlled synthesis of nanomaterials by tuning simple preparative parameters is an impressive path to develop diverse nanostructured materials. Here, we are exploring a successful example of fabrication of hierarchical CuO nanostructures (nanoflakes, nanopetals and diffused nanorods) by simply controlling temperature of reaction bath (3rd beaker) in SILAR method. These CuO nanostructures are further successfully employed as electrode material in supercapacitors. The correlation between electrochemical supercapacitive properties and nanostructures of CuO is investigated in detail. It is revealed that, the supercapacitive properties strongly depend on CuO nanostructures. The specific capacitance values for nanoflakes, nanopetals and diffused nanorods of CuO are found to be 664 F/g, 790 F/g and 695 F/g, respectively at 5 mV/s scan rate. Ragone plot ascertains that CuO nanostructures obtained by SILAR method are potential candidates for high power and high energy density supercapacitors. In addition, EIS analyses show lower ESR values and excellent frequency response for CuO nanostructures. © 2016 Published by Elsevier B.V. | - |
| dc.format.extent | 9 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Elsevier | - |
| dc.title | Morphological tuning of CuO nanostructures by simple preparative parameters in SILAR method and their consequent effect on supercapacitors | - |
| dc.type | Article | - |
| dc.publisher.location | 네델란드 | - |
| dc.identifier.doi | 10.1016/j.nanoso.2016.01.004 | - |
| dc.identifier.scopusid | 2-s2.0-84960329371 | - |
| dc.identifier.bibliographicCitation | Nano-Structures and Nano-Objects, v.6, pp 5 - 13 | - |
| dc.citation.title | Nano-Structures and Nano-Objects | - |
| dc.citation.volume | 6 | - |
| dc.citation.startPage | 5 | - |
| dc.citation.endPage | 13 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordAuthor | CuO | - |
| dc.subject.keywordAuthor | SILAR | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
30, Pildong-ro 1-gil, Jung-gu, Seoul, 04620, Republic of Korea+82-2-2260-3114
Copyright(c) 2023 DONGGUK UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.
