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Design of normally-off GaN-based T-gate with Drain-Field-Plate (TGDFP) HEMT for power and RF applicationsopen access
- Authors
- Khan, Mansoor Ali; Park, Hyun Chang
- Issue Date
- 14-Mar-2014
- Publisher
- IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
- Keywords
- HEMT; GaN; field-plate (FP); lateral; TGDFP; power; RF
- Citation
- IEICE ELECTRONICS EXPRESS, v.11, no.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEICE ELECTRONICS EXPRESS
- Volume
- 11
- Number
- 6
- ISSN
- 1349-2543
- Abstract
- In this paper, an effective T-gate with Drain-Field-Plate (TGDFP) technology is used in GaN-based HEMT for high breakdown voltage of 500V and drain current of 540mA/mm. Silvaco TCAD simulation showed that normally-off TGDFP HEMT with recessed gate length of 0.5 mu m exhibited high threshold voltage up to +1V and transconductance of 140mS/mm along with frequency operation in S-band (similar to 3GHz). The proposed lateral TGDFP HEMT provides desirable features for both Power and RF applications.
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Related Researcher
- Park, Hyun Chang
- College of Engineering (Department of Electronics and Electrical Engineering)