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Effects of N2O plasma treatment on perhydropolysilazane spin-on-dielectrics for inter-layer-dielectric applications
- Authors
- Park, Kyoung-Seok; Ko, Pil-Seok; Kim, Sam-Dong
- Issue Date
- 31-Jan-2014
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Perhydropolysilazane; Spin-on-dielectric; N2O plasma treatment; Inter-layer-dielectric
- Citation
- THIN SOLID FILMS, v.551, pp 57 - 60
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 551
- Start Page
- 57
- End Page
- 60
- ISSN
- 0040-6090
1879-2731
- Abstract
- Effects of the N2O plasma treatment (PT) on perhydropolysilazane spin-on-dielectric (PHPS SOD) were examined as potential inter-layer-dielectrics (ILDs) for sub-30 nm Si circuits. The spin-coated PHPS (18.5 wt.%) ILD layers converted at 650 degrees C were integrated with the 0.18 mu m Si front-end-of-the line process. A modified contact pre-cleaning scheme using N2O PT produced more uniform and stable contact chain resistances from the SOD ILDs than the case of pre-cleaning only by buffered oxide etcher. Our analysis shows that this enhancement is due to the minimized carbon contamination on the PHPS side-wall surface densified by PT. (C) 2013 Elsevier B.V. All rights reserved.
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