Effect of oxygen plasma treatment on performance of ZnO based dye sensitized solar cells
- Authors
- Khadtare, Shubhangi; Bansode, Avinash S.; Mathe, V. L.; Shrestha, Nabeen K.; Bathula, Chinna; Han, Sung-Hwan; Pathan, Habib M.
- Issue Date
- 15-Nov-2017
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Plasma treatment; ZnO; DSSC; Photoanode; N719 dye
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.724, pp 348 - 352
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 724
- Start Page
- 348
- End Page
- 352
- URI
- https://scholarworks.dongguk.edu/handle/sw.dongguk/17982
- DOI
- 10.1016/j.jallcom.2017.07.013
- ISSN
- 0925-8388
1873-4669
- Abstract
- In this paper we present impact of oxygen (O-2) plasma treatment on zinc oxide (ZnO) films and the optimization of their performance as photoanodes in dye sensitized solar cells (DSSCs) employing the I-/ I-3(-) electrolyte and the N719 sensitizer. Detailed surface and structural characterization of the ZnO films were accomplished using XRD and scanning electron microscopy (SEM) analysis. XRD results revealed the synthesized ZnO material to be highly crystalline and exhibit hexagonal crystal structure. The surface morphology suggested the grains to appear in spherical shape and distributed randomly. The ZnO based DSSC without treatment of O-2 plasma showed the short-circuit photocurrent density (J(sc)) 0.40 mAcm(-2), open-circuit voltage (V-oc), 0.50 V and fill factor (FF) 0.47 and power conversion efficiency of 0.36%. After 15 min of O-2 plasma treatment ZnO based DSSCs exhibited short-circuit photocurrent density (J(sc)) 1.10 mAcm(-2), open-circuit voltage (V-oc), 0.42 V and fill factor (FF) 0.43 and enhanced power conversion efficiency of 0.76%. (C) 2017 Elsevier B.V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Electronics and Electrical Engineering > 1. Journal Articles
- College of Advanced Convergence Engineering > Division of System Semiconductor > 1. Journal Articles

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.