Hith-speed and sensitivity devices with heterojunction structure by physical contact with single-layer graphene
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| DC Field |
Value |
Language |
| dc.contributor.author | 김득영 | - |
| dc.date.accessioned | 2023-05-11T19:41:08Z | - |
| dc.date.available | 2023-05-11T19:41:08Z | - |
| dc.date.issued | 2018-08-01 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/14335 | - |
| dc.title | Hith-speed and sensitivity devices with heterojunction structure by physical contact with single-layer graphene | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | The 34th Internatiional Conference on The Physics of Semiconductors(ICPS 2018) | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferenceDate | 2018-07-29 ~ 2018-08-03 | - |
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Collections - College of Natural Science > Division of Physics & Semiconductor Science > 2. Conference Papers

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