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Structural, electronic and optical properties of transition metal doped Hf 1-x TM x O 2 (TM = Co, Ni and Zn) using modi fied TB-mBJ potential for optoelectronic memristors devices

Khera, Ejaz Ahmad; Ullah, Hafeez; Imran, Muhammad; Niaz, N. A.; Hussain, Fayyaz; Khalil, R. M. Arif; Rasheed, Umbreen; Sattar, M. Atif; Iqbal, Fasial; Mahta, Chandreswar, et al.

ArticleIssue Date2020CitationOPTIK, v.212PublisherELSEVIER GMBH
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