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SCIESCOPUS
Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Studyopen access

Lee, Jun-Ho; Choi, Jun-Hyeok; Kang, Woo-Seok; Kim, Dohyung; Min, Byoung-Gue; Kang, Dong Min; Choi, Jung Han; Kim, Hyun-Seok

ArticleIssue Date2022CitationMicromachines, v.13, no.11, pp 1 - 16PublisherMDPI
SCIESCOPUS
Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Studyopen access

Choi, Jun-Hyeok; Kang, Woo-Seok; Kim, Dohyung; Kim, Ji-Hun; Lee, Jun-Ho; Kim, Kyeong-Yong; Min, Byoung-Gue; Kang, Dong Min; Kim, Hyun-Seok

ArticleIssue Date2023CitationMicromachines, v.14, no.6, pp 1 - 14PublisherMDPI
SCIESCOPUS
Improved RF Performances by Applying Asymmetric Passivation and Air-Bridged Field Plate in AlGaN/GaN HEMTs With Reliability-Based Simulation

Choi, Jun-Hyeok; Kim, Dohyung; Lee, Seo-Jun; Kim, Ji-Hun; Cho, Yoon-A; Min, Byoung-Gue; Kang, Dong Min; Kim, Hyun-Seok

ArticleIssue Date2024CitationIEEE Transactions on Electron Devices, v.71, no.1, pp 468 - 475PublisherIEEE
SCISCIESCOPUS
Normally-off dual gate AlGaN/GaN MISFET with selective area-recessed floating gate

Ahn, Ho-Kyun; Kim, Zin-Sig; Bae, Sung-Bum; Kim, Hae-Cheon; Kang, Dong-Min; Kim, Sung-Il; Lee, Jong-Min; Min, Byoung-Gue; Yoon, Hyoung-Sup; Lim, Jong-Won, et al.

ArticleIssue Date2014CitationSOLID-STATE ELECTRONICS, v.95, pp 42 - 45PublisherPERGAMON-ELSEVIER SCIENCE LTD
SCIESCOPUS
Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Various Dielectric Passivation Structures for High-Power and High-Frequency Operations: A Simulation Studyopen access

Kim, Ji-Hun; Lim, Chae-Yun; Lee, Jae-Hun; Choi, Jun-Hyeok; Min, Byoung-Gue; Kang, Dong Min; Kim, Hyun-Seok

ArticleIssue Date2024CitationMicromachines, v.15, no.9, pp 1 - 14PublisherMultidisciplinary Digital Publishing Institute (MDPI)
SCIESCOPUS
Optimization of central source contact length to mitigate temperature variation and thermal crosstalk in multi-finger AlGaN/GaN HEMTs: Reliability-based simulationopen access

Lim, Chae-Yun; Lee, Jae-Hun; Kim, Tae-Sung; Won, Young-Hyun; Min, Byoung-Gue; Kang, Dong Min; Kim, Hyun-Seok

ArticleIssue Date2026CitationMaterials Science in Semiconductor Processing, v.202, pp 1 - 8PublisherElsevier Ltd
SCIESCOPUS
Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Studyopen access

Kang, Woo-Seok; Choi, Jun-Hyeok; Kim, Dohyung; Kim, Ji-Hun; Lee, Jun-Ho; Min, Byoung-Gue; Kang, Dong Min; Choi, Jung Han; Kim, Hyun-Seok

ArticleIssue Date2024CitationMicromachines, v.15, no.1, pp 1 - 15PublisherMultidisciplinary Digital Publishing Institute (MDPI)
SCIESCOPUS
Optimization of source-connected field plate in AlGaN/GaN HEMTs for high-performance and high-reliability operation: A simulation studyopen access

Kim, Tae-Sung; Won, Young-Hyun; Lim, Chae-Yun; Lee, Jae-Hun; Jeong, Ju-Hwan; Park, Jong Yul; Chang, Sung-Jae; Min, Byoung-Gue; Kang, Dong Min; Kim, Hyun-Seok

ArticleIssue Date2026CitationMaterials Science in Semiconductor Processing, v.206, pp 1 - 9PublisherElsevier Ltd
SCIESCOPUS
Thermal Management with AlN Passivation in AlGaN/GaN HEMTs with an Air Gap Gate for Improved RF Performance: A Simulation Studyopen access

Won, Young-Hyun; Kim, Tae-Sung; Lee, Jae-Hun; Lim, Chae-Yun; Min, Byoung-Gue; Kang, Dong-Min; Kim, Hyun-Seok

ArticleIssue Date2026CitationMicromachines, v.17, no.1, pp 1 - 17PublisherMDPI
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