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SCIESCOPUS
Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effectopen access

Hwang, In-Tae; Jang, Kyu-Won; Kim, Hyun-Jung; Lee, Sang-Heung; Lim, Jong-Won; Yang, Jin-Mo; Kwon, Ho-Sang; Kim, Hyun-Seok

ArticleIssue Date2019CitationAPPLIED SCIENCES-BASEL, v.9, no.17PublisherMDPI
SCIE
DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure

Kwak, Hyeon-Tak; Jang, Kyu-Won; Kim, Hyun-Jung; Lee, Sang-Heung; Lim, Jong-Won; Kim, Hyun-Seok

ArticleIssue Date2019CitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.19, no.4, pp 2319 - 2322PublisherAMER SCIENTIFIC PUBLISHERS
SCIESCOPUS
Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structureopen access

Kwak, Hyeon-Tak; Chang, Seung-Bo; Kim, Hyun-Jung; Jang, Kyu-Won; Yoon, Hyung Sup; Lee, Sang-Heung; Lim, Jong-Won; Kim, Hyun-Seok

ArticleIssue Date2018CitationAPPLIED SCIENCES-BASEL, v.8, no.6PublisherMDPI
SCIESCOPUS
Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Studyopen access

Jang, Kyu-Won; Hwang, In-Tae; Kim, Hyun-Jung; Lee, Sang-Heung; Lim, Jong-Won; Kim, Hyun-Seok

ArticleIssue Date2020CitationMICROMACHINES, v.11, no.1PublisherMDPI
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